Peking University Researchers Develop 1nm Ferroelectric Transistor For Ai

In a groundbreaking development, researchers from Peking University have engineered the world's smallest and most energy-efficient transistor, measuring just 1 nanometer. This innovation, described as a ferroelectric field-effect transistor (FeFET), operates at a remarkably low voltage of 0.6V, significantly lower than the 1.5V required by traditional transistors. According to researcher Qiu Chengguang, "We have successfully reduced the physical gate length of the ferroelectric transistor to the atomic scale, enabling it to operate with minimal external energy while achieving unprecedented performance levels." This advancement is expected to revolutionize AI chip technology, making them faster and more power-efficient, with energy consumption reduced to one-tenth of current standards (TechJuice, February 26, 2026; eet-china, February 25, 2026).